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2SC4666

Toshiba Semiconductor
Part Number 2SC4666
Manufacturer Toshiba Semiconductor
Description Silicon NPN TRANSISTOR
Published Apr 3, 2005
Detailed Description 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Swit...
Datasheet PDF File 2SC4666 PDF File

2SC4666
2SC4666


Overview
2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Switching Applications • High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 100 125 −55~125 Unit V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEDEC ― temperature, etc.
) may cause this product to decrease in the JEITA SC-70 reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the TOSHIBA 2-2E1A absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Weight: 0.
006 g (typ.
) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol Test Condition ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (Note) VCE = 6 V, IC = 2 mA VCE (sat) fT Cob NF (1) IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.
1 mA, f = 100 Hz, Rg = 10 kΩ NF (2) VCE = 6 V, IC = 0.
1 mA, f = 1 kHz, Rg = 10 kΩ Note: hFE classification A: 600~1800, B: 1200~3600 Marking Min Typ.
Max Unit ⎯ ⎯ 0.
1 μA ⎯ ⎯ 0.
1 μA 600 ⎯ 3600 ⎯ 0.
12 0.
25 V 100 250 ⎯ MHz ⎯ 3.
5 ⎯ pF ⎯ 0.
5 ⎯ dB ⎯ 0.
3 ⎯ 1 2007-11-01 2SC4666...


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