NPN TRANSISTOR - Sanken electric
Description
High hFE LOW VCE (sat)
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4495 80 50 6 3 1 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SC4495
Application : Audio Temperature Compensation and General Purpose
(Ta=25°C) 2SC4495 10max 10max 50min 500min 0.
5max 40typ 30typ V MHz pF
13.
0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=0.
5A IC=1A, IB=20mA VCE=12V, IE=–0.
1A VCB=10V,f=1MHz
External Dimensions FM20(TO220F)
4.
0±0.
2 10.
1±0.
2 4.
2±0.
2 2.
8 c0.
5
Unit
µA
V
16.
9±0.
3 8.
4±0.
2
µA
1.
35±0.
15 1.
35±0.
15 0.
85 +0.
2 -0.
1 0.
45 +0.
2 -0.
1 2.
54 2.
2±0.
2 2.
4±0.
2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 20 RL (Ω) 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 15 IB2 (mA) –30 ton (µs) 0.
45typ tstg (µs) 1.
60typ tf (µs) 0.
85typ
2.
54
3.
9 B C E
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
3 0m A
V CE ( sa t ) – I B Characteristics (Typical)
1.
5
I C – V BE Temperature Characteristics (Typical)
3 (V CE =4V)
1
A 8m
12m
A
8mA
2.
5 Collector Current I C (A)
Collector Current I C (A)
2
5m A
3mA
1
2
1.
5
Temp) –55˚C (Case
Tem p) mp) (Ca 125
2mA
1mA
I C =1A
0 0
0
0
1
2
3
4
5
6
1
10
100
1000
0
0.
5
25˚C
0.
5
˚C
I B =0.
5mA
2A
(Cas
e Te
1
0.
5
se
3A
1
±0.
2
0.
8±0.
2
a b
ø3.
3±0.
2
Weight : Approx 2.
0g a.
Type No.
b.
Lot No.
1
1.
5
Collector-Emitter Voltage V C E (V)
Base Current I B (mA)
Base-Emittor Voltage V B E (V)
h FE – I C Characteristics (Typical)
(V C E =4V) 3000 DC Cur rent Gain h FE
h FE – I C Temperature Characteristics (Typical)
(V C E =4V) 5000 D C Cur r ent Gai n h FE
θ j- a ( ˚C/W)
Transient Thermal Resistance
θ j-a – t Characteristics
7 5
Typ
1000
125˚C 25˚C –55˚C
1000 500
500
100 50 20 0.
01
100 0.
01
0.
1
0.
5
1
3
0.
1
0.
5
1
3
1
1
10
100 Time t(ms)
1000 2000
Collector Current I C (A)
Collector...
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