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HY57V641620HG-I

Hynix Semiconductor
Part Number HY57V641620HG-I
Manufacturer Hynix Semiconductor
Description 4 Banks x 1M x 16Bit Synchronous DRAM
Published Apr 2, 2005
Detailed Description HY57V641620HG-I Series 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMO...
Datasheet PDF File HY57V641620HG-I PDF File

HY57V641620HG-I
HY57V641620HG-I

Overview
HY57V641620HG-I Series 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the Mobile applications r which require low power consumption and extended temperature range.
HY57V641620HG is organized as 4banks of 1,048,576x16.
HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), t...


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