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HY51VS17403HG

Hynix Semiconductor
Part Number HY51VS17403HG
Manufacturer Hynix Semiconductor
Description 4M x 4Bit EDO DRAM
Published Apr 2, 2005
Detailed Description HY51V(S)17403HG/HGL 4M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)17403HG/HGL is the new generation dynamic RA...
Datasheet PDF File HY51VS17403HG PDF File

HY51VS17403HG
HY51VS17403HG

Overview
HY51V(S)17403HG/HGL 4M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.
HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.
The HY51V(S)17403HG/HGL offers Extended Data Out PageMode as a high speed access mode.
Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II.
The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply 3.
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