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50MT060ULST

International Rectifier
Part Number 50MT060ULST
Manufacturer International Rectifier
Description LOW SIDE CHOPPER IGBT MTP
Published Apr 1, 2005
Detailed Description I27123 rev. C 02/03 50MT060ULS "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen. 4 Ultrafast Speed IGBT...
Datasheet PDF File 50MT060ULST PDF File

50MT060ULST
50MT060ULST

Overview
I27123 rev.
C 02/03 50MT060ULS "LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features • Gen.
4 Ultrafast Speed IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMT Thermistor (NTC) • Aluminum Nitride DBC • Very Low Stray Inductance Design for High Speed Operation • UL approved ( file E78996 ) VCES = 600V IC = 100A, TC = 25°C Benefits • Optimized for Welding, UPS and SMPS Applications • Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode • Low EMI, requires Less Snubbing • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resistance MMTP Absolute Maximum Ratings Parameters VCES IC ICM ILM IF IFM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Diode Continuous Forward Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation Diode IGBT @ T C = 25°C @ TC = 100°C @ T C = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 122°C Max 600 100 50 200 200 48 200 ± 20 2500 445 175 205 83 Units V A V W www.
irf.
com 1 50MT060ULS I27123 rev.
C 02/03 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters V(BR)CES V CE(on) Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min Typ Max Units Test Conditions 600 1.
69 1.
96 1.
88 3 600 - 13 22 29 0.
25 6 1.
64 1.
82 1.
56 1.
74 ± 250 2.
31 2.
55 2.
24 6 V V GE = 0V, IC = 250µA = 15V, IC = 50A = 15V, IC = 100A = 15V, I C = 100A, TJ = 150°C 0.
5mA 200µA = VGE , IC = 500µA V GE V GE V GE IC = IR = mV/°C V CE S mA V nA V GE(th) B VR ∆ V GE(th)/ ∆T J g fe I CES V FM I GES Gate Threshold Voltage Diode Reverse Breakdown Voltage Temperature Coeff.
of Threshold Voltage Forward Transconductance Collector-to-Emiter Leaking Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current V CE = 50V, I C = 100A V GE = 0V,...


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