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4AK19

Part Number	4AK19
Manufacturer	Hitachi Semiconductor
Description	Silicon N Channel MOS FET High Speed Power Switching
Published	Apr 1, 2005
Detailed Description	4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features • Low on...
Datasheet	4AK19 PDF File

Overview

4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st.
Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤ 0.
5 Ω, VGS = 10 V, ID = 2.
5 A R DS(on) ≤ 0.
6 Ω, VGS = 4 V, ID = 2.
5 A • 4 V gate drive devices.
• High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10.
Source 2, 4, 6, 8.
Gate 3, 5, 7, 9.
Drain 4AK19 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 devices poeration Symbol VDSS VGSS ID I D(pulse) I DR Pch(Tc = 25°C) Pch Tch Tstg Note2 Note2 Note1 Ratings 120 ±20 5 10 5 28 3.
5 150 –55 to +150 Unit V V A A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 ±20 — — 1.
0 — — 3 — — — — — — — — — — Typ — — — — — 0.
3 0.
35 5 25 140 3 2.
5 0.
3 0.
45 6.
6 1.
4 1.
1 600 Max — — 100 ±10 2.
0 0.
5 0.
6 — — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF kΩ µs µs µs µs V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = 100 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = 1 mA, VDS = 10 V I D = 2.
5 A, VGS = 10 V Note3 I D = 2.
5 A, VGS = 4 V Note3 I D = 2.
5 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDS = 0, VGS = 0, f = 1 MHz VGS = 10 V, ID = 2.
5 A RL = 12 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate series resistance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time N...

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