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BA484

NXP
Part Number BA484
Manufacturer NXP
Description Band-switching diodes
Published Apr 1, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification ...
Datasheet PDF File BA484 PDF File

BA484
BA484


Overview
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification Supersedes data of January 1982 1996 Apr 17 Philips Semiconductors Product specification Band-switching diodes FEATURES • Continuous reverse voltage: max.
35 V • Continuous forward current: max.
100 mA • Low diode capacitance: max.
1.
0 to 1.
6 pF • Low diode forward resistance: max.
0.
7 to 1.
2 Ω.
The diodes are type branded.
BA482; BA483; BA484 DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package.
k handbook, halfpage a MAM156 APPLICATION • VHF television tuners.
Fig.
1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN.
− − −65 − MAX.
35 100 +150 150 V mA °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.
3 VR = 20V VR = 20 V; Tamb = 75 °C Cd diode capacitance BA482 BA483 BA484 rD diode forward resistance BA482 BA483 BA484 IF = 3 mA; f = 200 MHz; see Fig.
5 0.
6 0.
8 0.
8 0.
7 1.
2 1.
2 Ω Ω Ω f = 1 to 100 MHz; VR = 3 V; see Fig.
4 0.
8 0.
7 1.
0 1.
2 1.
0 1.
6 pF pF pF − − 100 1 nA µA CONDITIONS IF = 100 mA; see Fig.
2 TYP.
− MAX.
1.
2 V UNIT 1996 Apr 17 2 Philips Semiconductors Product specification Band-switching diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1.
Device mounted on a FR4 printed-circuit board without metallization pad.
GRAPHICAL DATA MBG304 BA482; BA483; BA484 PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 300 500 UNIT K/W K/W handbook, halfpage (1) (2) (3) 100 10 5 handbook, halfpage IR (nA) 10 4 MBG303 IF (mA) 10 3 50 10 2 10 0 0 0.
5 1 V F (V) 1.
5 1 ...



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