Band-switching diode - NXP
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BA277 Band-switching diode
Product specification 1998 May 06
Philips Semiconductors
Product specification
Band-switching diode
FEATURES • Small plastic SMD package • Continuous reverse voltage: max.
35 V • Continuous forward current: max.
100 mA • Low diode capacitance: max.
1.
2 pF • Low diode forward resistance: max.
0.
7 Ω.
APPLICATIONS • Low loss band switching in VHF television tuners.
• Surface mount band-switching circuits.
DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523 (SC-79) SMD package.
PINNING
BA277
handbook, halfpage
Marking code: 1.
1 2
1 Top view
PIN
DESCRIPTION cathode anode
2
MAM399
Fig.
1
Simplified outline (SOD523; SC-79) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C CONDITIONS MIN.
− − − −65 −65 MAX.
35 100 715 +150 +150 V mA mW °C °C UNIT
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF IR Cd rD Note 1.
Guaranteed on AQL basis: inspection level S4, AQL 1.
0.
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W PARAMETER forward voltage reverse current diode capacitance diode forward resistance IF = 10 mA VR = 25 V VR = 20 V; Tamb = 75 °C f = 1 MHz; VR = 6 V; note 1; see Fig.
2 IF = 2 mA; f = 100 MHz; note 1; see Fig.
3 CONDITIONS MAX.
1 50 1 1.
2 0.
7 V nA µA pF Ω UNIT
1998 May 06
2
Philips Semiconductors
Product specification
Band-switching diode
GRAPHICAL DATA
BA277
handbook, halfpage
10
MGL433
handbook, halfpage
2.
5
MGL432
Cd (pF)
rD (Ω) 2.
0
1.
5 1 1.
0
0.
5
10−1
1
10
VR (V)
102
0 10−1
1
IF (mA)
10
f = 1 MHz; Tj = 25 °C.
f = 100 MHz; Tj = 25 °C.
Fig.
2
Diode capacitance as a function of reverse voltage; typical values.
Fig.
3
Diod...
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