DatasheetsPDF.com

FQP9N30

Fairchild Semiconductor
Part Number FQP9N30
Manufacturer Fairchild Semiconductor
Description 300V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQP9N30 May 2000 QFET FQP9N30 300V N-Channel MOSFET General Description These N-Channel enhancement mode power field e...
Datasheet PDF File FQP9N30 PDF File

FQP9N30
FQP9N30

Overview
FQP9N30 May 2000 QFET FQP9N30 300V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.
TM Features • • • • • • 9.
0A, 300V, RDS(on) = 0.
45Ω @VGS = 10 V Low gate charge ( typical 17 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP9N30 300 9.
0 5.
7 36 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 420 9.
0 9.
8 4.
5 98 0.
78 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.
5 -Max 1.
28 -62.
5 Units °C/W °C/W °C/W ©2000 Fairchild Semiconductor International Rev.
A, May 2000 FQP9N30 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)