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FQP6N60

Part Number	FQP6N60
Manufacturer	Fairchild Semiconductor
Description	600V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQP6N60 April 2000 QFET FQP6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field...
Datasheet	FQP6N60 PDF File

Overview

FQP6N60 April 2000 QFET FQP6N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 6.
2A, 600V, RDS(on) = 1.
5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " "...

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