DatasheetsPDF.com

F1012

Part Number	F1012
Manufacturer	Polyfet RF Devices
Description	RF POWER VDMOS TRANSISTOR
Published	Mar 30, 2005
Detailed Description	polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applic...
Datasheet	F1012 PDF File

Overview

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features gold metal for greatly extended lifetime.
Low output capacitance and high Ft enhance broadband performance TM F1012 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80 Watts Gemini Package Style AH HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 290 Watts Junction to Case Thermal Resistance 0.
6 o C/W Maximum Junction Temperature...

Similar Datasheet

F1000LC120 Extra Fast Recovery Diode - IXYS
F1001 RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
F100122 9-BIT BUFFER - National Semiconductor
F100124 Hex TTL-to-ECL Translator - National Semiconductor
F100125 Hex ECL-to-TTL Translator - National Semiconductor
F100136 4-Stage Counter / Shift Register - National Semiconductor
F100164 16 Input Multiplexer - Fairchild Semiconductor
F100164 16 Input Multiplexer - National Semiconductor
F100180 HIGH-SPEED 6-BIT ADDER - National Semiconductor
F100183 2 X 8-BIT RECODE MULTIPLIER - National Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)