| Part Number | 3SK296 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel Dual-Gate MOSFET |
| Description | 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. ... |
| Features |
• Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G... |
| Published | Mar 30, 2005 |
| Datasheet |
 3SK296 PDF File
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