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2SK3417

Toshiba Semiconductor
Part Number 2SK3417
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3417 Switching Regulator Applications · ...
Datasheet PDF File 2SK3417 PDF File

2SK3417
2SK3417

Overview
2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3417 Switching Regulator Applications · · · · · · Reverse-recovery time: trr = 60 ns (typ.
) Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.
6 Ω (typ.
) High forward transfer admittance: ïYfsï = 4.
0 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 500 500 ±30 5 20 50 180 5 5 150 -55~150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-10S1B Weight: 1.
5 g (typ.
) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
5 83.
3 Unit °C/W °C/W Note 1: Please use devise on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.
2 mH, RG = 25 W, IAR = 5 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC JEITA TOSHIBA ― ― 2-10S1B Weight: 1.
5 g (typ.
) 1 2002-08-12 2SK3417 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ïYfsï Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG ...


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