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2SK322

Hitachi Semiconductor
Part Number 2SK322
Manufacturer Hitachi Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Ga...
Datasheet PDF File 2SK322 PDF File

2SK322
2SK322

Overview
2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 2 1.
Drain 2.
Source 3.
Gate 2SK322 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings –15 –15 50 5 150 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Note: Grade Mark I DSS P WP 5 to 16 Q WQ 14 to 24 Symbol V(BR)GDO V(BR)GSO I GSS I DSS...


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