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2SK1471

Sanyo Semicon Device
Part Number 2SK1471
Manufacturer Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Published Mar 30, 2005
Detailed Description Ordering number:EN3772A Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silic...
Datasheet PDF File 2SK1471 PDF File

2SK1471
2SK1471

Overview
Ordering number:EN3772A Features · Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
N-Channel Silicon MOSFET 2SK1471 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SK1471] 6.
5 5.
0 4 2.
3 0.
5 5.
5 1.
5 7.
0 unit:mm 2092B 0.
85 0.
7 0.
6 123 2.
3 2.
3 0.
8 1.
6 7.
5 1.
2 0.
5 1 : Gate 2 : Drain 3 : Source SANYO : TP [2SK1471] 6.
5 2.
3 5.
0 0.
5 4 0.
8 5.
5 1.
5 2.
5 7.
0 1.
2 0.
85 1 0.
6 2 3 2.
3 2.
3 0.
5 1.
2 0 to 0.
2 1 : Gate 2 : Drain 3 : Source SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.
,Ltd.
Semiconductor Company TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61599TH (KT)/71993TH (KOTO) 8-7547, 7921 No.
3772–1/4 2SK1471 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer A...


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