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2SK1389

Part Number	2SK1389
Manufacturer	Fuji Electric
Description	Silicon N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	2SK1389 F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Tra...
Datasheet	2SK1389 PDF File

Overview

2SK1389 F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 60V 0,025Ω 50A 125W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max.
Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 60 50 200 50 ±20 125 150 -55 ~ +150 Unit V A A A V W °C °C > Equivalent Ci...

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