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2SK1215

Hitachi Semiconductor
Part Number 2SK1215
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline CMPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK1215...
Datasheet PDF File 2SK1215 PDF File

2SK1215
2SK1215

Overview
2SK1215 Silicon N-Channel MOS FET Application VHF amplifier Outline CMPAK 3 1 2 1.
Gate 2.
Drain 3.
Source 2SK1215 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1.
VGS = –4 V Symbol VDSX* VGSS ID IG Pch Tch Tstg 1 Ratings 20 ±5 30 ±1 100 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: Grade Mark I DSS D IGD 4 to 8 E IGE 6 to 10 Symbol V(BR)DSX I GSS I DSS* 1 Min 20 — 4 0 8 — — — 24 — F IGF 8 to 12 Typ — — — — 14 2.
5 1.
6 0.
03 — — Max — ±20 12 –2.
0 — — — — — 3 Unit V nA mA V mS pF pF pF dB dB Test conditions I D = 100 µA, VGS = –4 V VGS = ±5 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 ...


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