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2SK1164

Part Number	2SK1164
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel MOSFET
Published	Mar 30, 2005
Detailed Description	2SK1163, 2SK1164 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance...
Datasheet	2SK1164 PDF File

Overview

2SK1163, 2SK1164 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source S 2SK1163, 2SK1164 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1163 2SK1164 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 11 40 11 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1163, 2SK1164 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1163 V(BR)DSS 2SK1164 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VG...

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