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2SD768

Hitachi Semiconductor
Part Number 2SD768
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Mar 30, 2005
Detailed Description 2SD768(K) Silicon NPN Epitaxial Application Medium speed and power switching complementary pair with 2SB727(K) Outline...
Datasheet PDF File 2SD768 PDF File

2SD768
2SD768


Overview
2SD768(K) Silicon NPN Epitaxial Application Medium speed and power switching complementary pair with 2SB727(K) Outline TO-220AB 2 1 1.
Base 2.
Collector (Flange) 3.
Emitter 1 2 3 3 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 120 120 7 6 10 40 150 –55 to +150 Unit V V V A A W °C °C 2SD768(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 1000 — — — — — — Typ — — — — — — — — — 1.
0 3.
0 Max — — 100 10 20000 1.
5 3 2 3.
5 — — V V V V µs µs Unit V V µA µA Test conditions I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE=∞ VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 6A, IB = 60 mA*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I C = 3 A, IB1 = –IB2 = 6 mA I C = 3 A, IB1 = –IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1.
Pulse test.
hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t off Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 30 Collector current IC (A) 10 3 1.
0 0.
3 0.
1 0.
03 0 50 100 Case temperature TC (°C) 150 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) iC(peak) IC(max) 1 µs Area of Safe Operation 10 0µ 40 s PW era DC 5°C s =2 1 m 0 ms C n(T tio =1 Op 20 Ta = 25°C 1 shot pulse ) 2 2SD768(K) Typical Output Characteristics 10 10,000 TC = 25°C DC current transfer ratio hFE 3,000 DC Current Transfer Ratio vs.
Collector Current Collector current IC (A) 8 6 1.
2 1.
0 0.
8 0.
6 Ta 1,000 = °C 75 25 °C C 5° 4 –2 0.
4 2 0.
2 mA IB = 0...


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