METAL GATE RF SILICON FET - Seme LAB
Description
TetraFET
D1020UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C (2 pls)
B
G (typ)
2 1
H D
3
P (2 pls) A
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 400MHz PUSH–PULL
FEATURES
• EXTRA LOW Crss
E (4 pls) F I
N
M
O
J
K
• SIMPLIFIED AMPLIFIER DESIGN
DRAIN 1 GATE 2
DR
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N O P Millimetres 19.
05 10.
77 45° 9.
78 5.
71 27.
94 1.
52R 10.
16 22.
22 0.
13 2.
72 1.
70 5.
08 34.
03 1.
57R Tol.
0.
50 0.
13 5° 0.
13 0.
13 0.
13 0.
13 0.
13 MAX 0.
02 0.
13 0.
13 0.
50 0.
13 0.
08 PIN 2 PIN 4
• SUITABLE FOR BROAD BAND APPLICATIONS • SIMPLE BIAS CIRCUITS
Inches 0.
75 0.
424 45° 0.
385 0.
225 1.
100 0.
060R 0.
400 0.
875 0.
005 0.
107 0.
067 0.
200 1.
340 0.
062R
Tol.
0.
020 0.
005 5° 0.
005 0.
005 0.
005 0.
005 0.
005 MAX 0.
001 0.
005 0.
005 0.
020 0.
005 0.
003
• LOW NOISE • HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Prelim.
11/00
Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature
389W 70V ±20V 20A –65 to 150°C 200°C
D1020UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS VGS(th) gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 150W VDS = 28V f = 400MHz IDQ = 2A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 5A 1 4 10 50 20:1 VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70
Typ.
Max.
Unit
V 5 1 7 mA
mA
V S dB %...
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