DatasheetsPDF.com

BAV99WT1

Motorola Inc
Part Number BAV99WT1
Manufacturer Motorola Inc
Description SC-70/SOT-323 Dual Series Switching Diode
Published Mar 26, 2005
Detailed Description www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by BAV99WT1/D SC-70/SOT-323 Dual Series...
Datasheet PDF File BAV99WT1 PDF File

BAV99WT1
BAV99WT1


Overview
www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by BAV99WT1/D SC-70/SOT-323 Dual Series Switching Diode The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Suggested Applications • ESD Protection • Polarity Reversal Protection • Data Line Protection • Inductive Load Protection • Steering Logic MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current(1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current t = 1.
0 m s t = 1.
0 ms t = 1.
0 S Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM 2.
0 1.
0 0.
5 Value 70 215 500 70 715 450 Unit Vdc mAdc mAdc V mA mA A BAV99WT1 BAV99RWT1 Motorola Preferred Devices 3 1 2 ANODE 1 CATHODE 2 3 CATHODE/ANODE BAV99WT1 CASE 419–02, STYLE 9 SC–70/SOT–323 CATHODE 1 3 CATHODE/ANODE BAV99RWT1 CASE 419–02, STYLE 10 SC–70/SOT–323 ANODE 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1.
FR–5 = 1.
0  0.
75  0.
062 in.
2.
Alumina = 0.
4  0.
3  0.
024 in.
99.
5% alumina.
Symbol PD Max 200 1.
6 Rq JA PD 625 300 2.
4 Rq JA TJ, Tstg 417 – 65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BAV99WT1 = A7 BAV99RWT1 = F7 Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Motorola, Small–Signal Inc.
1996 Motorola Transistors, FETs and Diodes Device Data 1 BAV99WT1 BAV99RWT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µA) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)