Silicon Switching Diode - Infineon Technologies AG
Description
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BAV70.
.
.
Silicon Switching Diode • For high-speed switching applications • Common cathode configuration
BAV70 BAV70F BAV70L3 BAV70T BAV70W
3
BAV70S BAV70U
6
5
4
D 3 D 1 D 2 D 1 D 2
D 4
1
2
1
2
3
Type BAV70 BAV70F* BAV70L3 ** BAV70S BAV70T BAV70U BAV70W * Preliminary Data ** Target Data
Package SOT23 TSFP-3 TSLP-3-1 SOT363 SC75 SC74 SOT323
Configuration common cathode common cathode common cathode, leadless double common cathode common cathode double common cathode common cathode
Marking A4s A4s A4 A4s A4s A4s A4s
1
Mar-10-2004
BAV70.
.
.
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs t = 1 ms t = 1 s single t = 1 s double Total power dissipation BAV70, T S ≤ 33°C BAV70F, TS ≤ tbd BAV70L3, TS ≤ tbd BAV70S, TS ≤ 85°C BAV70T, TS ≤ 73°C BAV70U, TS ≤ 90°C BAV70W, TS ≤ 103°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BAV70 BAV70F BAV70L3 BAV70S BAV70T BAV70U BAV70W
1For
Symbol VR VRM IF IFSM
Value 80 85 200 4.
5 1 0.
5 0.
75
Unit V mA A
Ptot 250 250 250 250 250 250 250 Tj Tstg Symbol
RthJS ≤ 460 ≤ tbd ≤ tbd ≤ 260 ≤ 310 ≤ 240 ≤ 190
mW
150 -65 .
.
.
150 Value
°C
Unit K/W
calculation of RthJA please refer to Application Note Thermal Resistance
2
Mar-10-2004
BAV70.
.
.
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min.
typ.
max.
DC Characteristics 85 V Breakdown voltage V(BR) I(BR) = 100 µA Reverse current VR = 70 V VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA VF 715 855 1000 1200 1250 IR 0.
15 30 50 mV µA
AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA , RL = 100 Ω Test circuit for reverse recovery time
D.
U.
T.
CT trr
-
-
1.
5 4
pF ns
Pulse generato...
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