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HM50N06K

H&M semi
Part Number HM50N06K
Manufacturer H&M semi
Description N-Channel Enhancement Mode Power MOSFET
Published Apr 22, 2024
Detailed Description HM50N06K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to...
Datasheet PDF File HM50N06K PDF File

HM50N06K
HM50N06K

Overview
HM50N06K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
GENERAL FEATURES ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram H&M SEMI HM50N06K Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assi...


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