DatasheetsPDF.com

HM1N6035

H&M Semiconductor
Part Number HM1N6035
Manufacturer H&M Semiconductor
Description Silicon N-Channel Power MOSFET
Published Apr 18, 2024
Detailed Description  Silicon N-Channel Power MOSFET HM1N6035 General Description： VDSS 600 HM1N60PR, the silicon N-channel Enhanced I...
Datasheet PDF File HM1N6035 PDF File

HM1N6035
HM1N6035

Overview
 Silicon N-Channel Power MOSFET HM1N6035 General Description： VDSS 600 HM1N60PR, the silicon N-channel Enhanced ID 1.
0 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is SOT-89-3L, which accords with the RoHS standard.
Features： z Fast Switching z Low ON Resistance(Rdson≤10.
5Ω) z Low Gate Charge (Typical Data:6.
0nC) z Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test Applica...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)