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HM4806

H&M semi
Part Number HM4806
Manufacturer H&M semi
Title Dual N-Channel MOSFET
Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha...
Features ● VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagram ● High density cell design for ultra low Rds...
Published Apr 18, 2024
Datasheet PDF File HM4806 PDF File


HM4806
HM4806


Features

● VDS =20V,ID =7.5A RDS(ON) <10mΩ @ VGS=10V (Typ:8.0mΩ) Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good ...



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