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HM17N10K

H&M semi
Part Number HM17N10K
Manufacturer H&M semi
Title N-Channel Power MOSFET
Description The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate c...
Features ● VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ) ● High density cell design for ultra low Rdson ● Fully character...
Published Apr 18, 2024
Datasheet PDF File HM17N10K PDF File


HM17N10K
HM17N10K


Features

● VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● S...



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