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60T03J

Silicon Standard
Part Number 60T03J
Manufacturer Silicon Standard
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Apr 3, 2024
Detailed Description SSM60T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description...
Datasheet PDF File 60T03J PDF File

60T03J
60T03J


Overview
SSM60T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S BV DSS R DS(ON) ID 30V 12mΩ 45A The SSM60T03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
The through-hole version, the SSM60T03J in TO-251, is available for low-footprint vertical mounting.
These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability.
G D S TO-252 (H) G D S TO-251 (J) Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Rating 30 ±20 45 32 120 44 0.
352 29 -55 to 175 -55 to 175 Units V V A A A W W/°C mJ °C °C Max.
3.
4 110 Units °C/W °C/W 8/16/2004 Rev.
2.
1 www.
SiliconStandard.
com 1 of 5 SSM60T03H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS ∆ BV ∆ DSS/ Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=20A VGS=4.
5V, ID=15A Gate Threshold Voltage Forward Transconductance2 Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=175oC) Gate-Source Leakage Total Gate Charge2 Gate-...


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