Quad 2-Input NAND Gate - Toshiba
Description
CMOS Digital Integrated Circuits Silicon Monolithic
74HC00D
74HC00D
1.
Functional Description
• Quad 2-Input NAND Gate
2.
General
The 74HC00D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3.
Features
(1) High speed: tpd = 6 ns (typ.
) at VCC = 5 V (2) Low power dissipation: ICC = 1.
0 µA (max) Ta = 25 (3) Balanced propagation delays: tPLH ≈ tPHL (4) Wide operating voltage range: VCC(opr) = 2.
0 to 6.
0 V
4.
Packaging
SOIC14
©2016 Toshiba Corporation
1
Start of commercial production
2016-03
2016-08-04 Rev.
3.
0
5.
Pin Assignment
6.
Marking 7.
IEC Logic Symbol
74HC00D
©2016 Toshiba Corporation
2
2016-08-04 Rev.
3.
0
8.
Truth Table
74HC00D
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
9.
Absolute Maximum Ratings (Note)
Characteristics
Symbol Note
Rating
Unit
Supply voltage
VCC
-0.
5 to 7.
0
V
Input voltage
VIN
-0.
5 to VCC + 0.
5
V
Output voltage
VOUT
-0.
5 to VCC + 0.
5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±20
mA
Output current
IOUT
±25
mA
VCC/ground current
ICC
±50
mA
Power dissipation
PD (Note 1)
500
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings and the operating ranges.
Please de...
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