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TN0110

Part Number	TN0110
Manufacturer	Microchip
Description	N-Channel Vertical DMOS FET
Published	Jan 22, 2024
Detailed Description	TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • 50 pF...
Datasheet	TN0110 PDF File

Overview

TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features • 2V Maximum Low Threshold • High Input Impedance • 50 pF Typical Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Operated Systems • Photovoltaic Drives • Analog Switches • General Purpose Line Drivers • Telecommunication Switches General Description The TN0110 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power handlin...

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