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NP29N06QDK

Renesas
Part Number NP29N06QDK
Manufacturer Renesas
Description Dual N-channel Power MOSFET
Published Jan 14, 2024
Detailed Description Data Sheet NP29N06QDK 60 V – 30 A – Dual N-channel Power MOS FET Application: Automotive R07DS1330EJ0200 Rev.2.00 May ...
Datasheet PDF File NP29N06QDK PDF File

NP29N06QDK
NP29N06QDK

Overview
Data Sheet NP29N06QDK 60 V – 30 A – Dual N-channel Power MOS FET Application: Automotive R07DS1330EJ0200 Rev.
2.
00 May 24, 2018 Description NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Super low on-state resistance  RDS(on)1 = 20 m MAX.
(VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX.
(VGS = 4.
5 V, ID = 7.
5 A)  Low Ciss: Ciss = 1000 pF TYP.
(VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified  Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation.
Steps must b...


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