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IMH9AFRA

ROHM
Part Number IMH9AFRA
Manufacturer ROHM
Description Dual digital transistors
Published Jan 4, 2024
Detailed Description IMH9A FRA General purpose (Dual digital transistors) Datasheet AEC-Q101 Qualified lOutline Parameter VCC r IC(MAX.)...
Datasheet PDF File IMH9AFRA PDF File

IMH9AFRA
IMH9AFRA


Overview
IMH9A FRA General purpose (Dual digital transistors) Datasheet AEC-Q101 Qualified lOutline Parameter VCC r IC(MAX.
) R1 fo R2 DTr1 and DTr2 50V 100mA 10kΩ 47kΩ lFeatures d 1)Two DTC114Y chips in a SMT6 package.
e 2)Mounting possible with SMT3 automatic   mounting machines.
d 3)Transistor elements are independent, n s   eliminating interference.
4)Mounting cost and area can be cut in half.
SOT-457   SC-74           SMT6                  lInner circuit ecomwmDeesign lApplication R e INVERTER, INTERFACE, DRIVER t N lPackaging specifications NoPart No.
Package Package size                                            Taping code Reel size Tape width (mm) (mm) Basic ordering unit.
(pcs) Marking SOT-457 IMH9A FRA (SMT6) 2928 T110 180 8 3000 H9                                                                                          www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights reserved.
1/5 20161012 - Rev.
001 IMH9A FRA                   Datasheet lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Supply voltage VCC 50 V Input voltage Output current r Collector current fo Power dissipation Junction temperature d Range of storage temperature VIN IO IC(MAX)*1 PD*2*3 Tj Tstg -6 to 40 70 100 300 150 -55 to +150 V mA mA mW/TOTAL ℃ ℃ nde s lElectrical characteristics (Ta = 25°C) me ign Parameter Symbol Conditions s Input voltage om e Output voltage D Input current c Output current e w DC current gain R e Input resistance t Resistance ratio No N Transition frequency VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 VCC = 5V, IO = 100μA VO = 0.
3V, IO = 1mA IO = 5mA, II = 0.
25mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 5mA - f *1 T VCE = 10V, IE = -5mA, f = 100MHz Values Unit Min.
Typ.
Max.
- - 0.
3 V 1.
4 - - - 100 300 mV - - 880 μA - - 500 nA 68 - - - 7 10 13 kΩ 3.
7 4.
7 5.
7 - - 250 - MHz *1 Characteristics of built-in transistor *2...



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