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FDT86113LZ

ON Semiconductor
Part Number FDT86113LZ
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET – N-Channel, POWERTRENCH) 100 V, 3.3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET ...
Datasheet PDF File FDT86113LZ PDF File

FDT86113LZ
FDT86113LZ

Overview
MOSFET – N-Channel, POWERTRENCH) 100 V, 3.
3 A, 100 mW FDT86113LZ General Description This N−Channel logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance.
G−S zener has been added to enhance ESD voltage level.
Features • Max rDS(on) = 100 mW at VGS = 10 V, ID = 3.
3 A • Max rDS(on) = 145 mW at VGS = 4.
5 V, ID = 2.
7 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • HBM ESD Protection Level > 3 kV Typical (Note 4) • 100% UIL Tested • This Device is Pb−Free and Halide Free Applications • DC − DC Switch Specifications MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current −Continuous −Pulsed 100 V ±20 V 3.
3 A 12 EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 3) Power Dissipation TA = 25°C (Note 1a) TA = 25°C (Note 1b) Operating and Storage Junction Temperature Range 9 mJ 2.
2 W 1.
0 −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.
onsemi.
com D S D G SOT−223 CASE 318H MARKING DIAGRAM AYW 113LZG G 1 A Y W 113LZ G = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT D G D S ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2011 1 August, 2022 − Rev.
2 Publication Order Number: FDT86113LZ/D FDT86113LZ THERMAL CHARACTERISTICS Symbol Parameter RqJC RqJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to ...


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