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FDS8935

ON Semiconductor
Part Number FDS8935
Manufacturer ON Semiconductor
Description Dual P-Channel MOSFET
Published Dec 25, 2023
Detailed Description FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ Features „...
Datasheet PDF File FDS8935 PDF File

FDS8935
FDS8935

Overview
FDS8935 Dual P-Channel PowerTrench® MOSFET FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.
1 A, 183 mΩ Features „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.
1 A „ Max rDS(on) = 247 mΩ at VGS = -4.
5 V, ID = -1.
9 A General Description „ This P-channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.
„ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant Applications „ Load Switch „ Synchronous Rectifier D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 D2 55 D2 66 Q2 D1 ...


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