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FDS8876

ON Semiconductor
Part Number FDS8876
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 25, 2023
Detailed Description MOSFET – N-Channel, POWERTRENCH) 30 V, 12.5 A, 8.2 mW FDS8876, FDS8876-F40 General Description This N−Channel MOSFET ha...
Datasheet PDF File FDS8876 PDF File

FDS8876
FDS8876

Overview
MOSFET – N-Channel, POWERTRENCH) 30 V, 12.
5 A, 8.
2 mW FDS8876, FDS8876-F40 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Features • rDS(on) = 8.
2 mW, VGS = 10 V, ID = 12.
5 A • rDS(on) = 10.
2 mW, VGS = 4.
5 V, ID = 11.
4 A • High Performance Trench Technology for Extremely Low rDS(on) • Low Gate Charge • High Power and Current Handling Capability • These Devices are Pb−Free and are RoHS Compliant Applications • DC/DC Converters MOSFET MAXIMUM RATINGS (TA = 25°C unles...


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