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FDS6699S

Part Number	FDS6699S
Manufacturer	ON Semiconductor
Description	N-Channel MOSFET
Published	Dec 25, 2023
Detailed Description	SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 3.6 mW FDS6699S General Description The FDS6699S is designed to replace a...
Datasheet	FDS6699S PDF File

Overview

SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 3.
6 mW FDS6699S General Description The FDS6699S is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies.
This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.
The FDS6699S includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.
Features • 21 A, 30 V ♦ Max RDS(on) = 3.
6 mW at VGS = 10 V ♦ Max RDS(on) = 4.
5 mW at VGS = 4.
5 V • Includes SyncFET Schottky Body Diode • High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching • High Power and Current Handling Capability • 100% RG (Gate Resistance) T...

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