• Extended TJ Rating to 175°C • Shielded Gate MOSFET Technology • Max rDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A • Max rDS(on) = 8.5 mW at VGS = 8 V, ID = 12 A • High Performance Technology for Extremely Low rDS(on) • Termination is Lead−free • RoHS C...
FDMC86340ET80 PDF File
