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2SC6127

Part Number	2SC6127
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Dec 13, 2023
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications High Voltage Amplifier A...
Datasheet	2SC6127 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications High Voltage Amplifier Applications 2SC6127 Unit: mm • High voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO 800 V VCEO 800 V VEBO 5 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 10 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.
g.
the application of high JEITA ― temperature/current/voltage and ...

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