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2SC6105

Part Number	2SC6105
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Dec 13, 2023
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 2SC6105 High Voltage Switching Applications ...
Datasheet	2SC6105 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 2SC6105 High Voltage Switching Applications • High voltage: VCEO = 600 V (max) • Low saturation voltage: VCE (sat) (1) = 1.
0 V (max) @IC = 20 mA, IB = 0.
5 mA Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC PULSE Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 600 V 600 V 7 V 50 mA 100 25 mA 200 mW 150 °C −55 to 150 °C JEDEC JEITA TO-236MOD SC-59 Note: Using continuously under heavy ...

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