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TW015Z65C

Toshiba
Part Number TW015Z65C
Manufacturer Toshiba
Description Silicon Carbide N-Channel MOSFET
Published Dec 13, 2023
Detailed Description MOSFETs Silicon Carbide N-Channel MOS TW015Z65C TW015Z65C 1. Applications • Switching Voltage Regulators 2. Features (...
Datasheet PDF File TW015Z65C PDF File

TW015Z65C
TW015Z65C

Overview
MOSFETs Silicon Carbide N-Channel MOS TW015Z65C TW015Z65C 1.
Applications • Switching Voltage Regulators 2.
Features (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.
35 V (typ.
) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 15 mΩ (typ.
) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 11.
7 mA) (6) Recommended gate - source drive voltage: VGS_on = 18 V, VGS_off = 0 V (7) Enhancement mode.
3.
Packaging and Internal Circuit TO-247-4L(X) 1.
Drain (heatsink) 2.
Source 1 3.
Source 2 4.
Gate Notice: Only use source 2 pin for gate input signal return.
Please make sure that the main current flows into the source 1 pin.
©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-06 2023-06-16 Rev.
2.
0 TW015Z65C 4.
Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified) Characteristics S...


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