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UT2312H

UTC
Part Number UT2312H
Manufacturer UTC
Title N-CHANNEL POWER MOSFET
Description The UT2312H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operat...
Features * RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology ...
Published Nov 18, 2023
Datasheet PDF File UT2312H PDF File


UT2312H
UT2312H


Features
* RDS(ON) ≤ 55 mΩ @ VGS =4.5V, ID =5.0 A * RDS(ON) ≤ 85 mΩ @ VGS =2.5 V, ID =4.0 A * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance
 SYMBOL 3.Drain Power MOS...



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