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AHV85111

Allegro
Part Number AHV85111
Manufacturer Allegro
Description Self-Powered Single-Channel Isolated GaNFET Driver
Published Oct 6, 2023
Detailed Description AHV85111 Self-Powered Single-Channel Isolated GaN FET Driver with Regulated Bipolar Output Drive FEATURES AND BENEFITS ...
Datasheet PDF File AHV85111 PDF File

AHV85111
AHV85111

Overview
AHV85111 Self-Powered Single-Channel Isolated GaN FET Driver with Regulated Bipolar Output Drive FEATURES AND BENEFITS • Transformer isolation barrier • Power-Thru integrated isolated bias □ No need for high-side bootstrap □ No need for external secondary-side bias • AEC-Q100 Grade 2 qualification • Bipolar drive output with adjustable regulated positive rail • Built-in primary-side 3.
3 V REF bias output • 50 ns propagation delay • Supply voltage 10.
8 V < VDRV < 13.
2 V • Undervoltage lockout on primary VDRV and secondary VSEC • Enable pin with fast response • Continuous ON capability—no need to recycle IN or recharge bootstrap capacitor • CMTI > 100 V/ns dv/dt immunity • Creepage distance 8.
4 mm • Safety regulatory approvals □ 5 kV RMS VISO per UL 1577 □ 8 kV pk VIOTM maximum transient isolation voltage □ 1 kV pk maximum working isolation voltage APPLICATIONS • AC-DC and DC-DC converters: Totem-pole PFC, LLC half-/full-bridge, SR drive, multi-level converters, phase-shifted full-bridge • Automotive: EV chargers, OBC • Industrial: Data center, transportation, robotics, audio, motors • Clean Energy: Micro-, string, and solar inverters DESCRIPTION The AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications and topologies.
An isolated dual positive/negative output bias supply is integrated into the driver, eliminating the need for any external gate drive auxiliary bias supply or high-side bootstrap.
The bipolar output rails, with adjustable and regulated positive rail, improves dv/dt immunity, greatly simplifies the system design, and reduces EMI through reduced total common-mode (CM) capacitance.
It also allows the driving of a floating switch in any location in a switching power topology.
The driver has fast propagation delay and high peak source/ sink capability to efficiently drive GaN FETs in high-frequency designs.
High CMTI combined with isolated outputs for both bias power and drive make it ideal in applications requiring isola...


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