N-Channel FET - ON Semiconductor
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138W
Description These N−Channel Enhancement Mode Field Effect Transistor.
These products have been Designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
• RDS(on) = 3.
5 W @ VGS = 10 V, ID = 0.
22 A
RDS(on) = 6.
0 W @ VGS = 4.
5 V, ID = 0.
22 A
• High Density Cell Design For Extremely Low RDS(on) • Rugged and Reliable • Compact Industry Standard SOT−323 Surface Mount Package • These Devices are Pb−Free and Halide Free
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDSS VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current − Continuous (Note 1) − Pulsed
50
V
±20
V
A
0.
21
A
0.
84
TJ, TSTG Operating and Storage Junction Temperature Range
−55 to +150
°C
TL
Maximum Lead Temperature for
Soldering Purposes, 1/16” from
Case for 10 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.
onsemi.
com
SOT−323, 3 Lead, 1.
25X2 CASE 419AB
D
G
S
MARKING DIAGRAM
Y A138
Y
= Year
A
= Assembly Plant Code
138
= Specific Device Code
ORDERING INFORMATION
Device BSS138W
Package
SOT−323 (Pb−Free)
Shipping†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
June, 2022 − Rev 2
Publication Order Number: BSS138W/D
BSS138W
THERMAL CHARACTERISTICS
Symbol
Parameter
PD
Maximum Power Dissipation Derate Above 25°C (Note 1)
RθJA
...
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