Plastic Silicon Photodiode - ON Semiconductor
Description
Plastic Silicon Photodiode QSD2030
DATA SHEET www.
onsemi.
com SCHEMATIC
CATHODE
Features
• PIN Photodiode • Package Type: T−1 3/4 (5 mm Lens Diameter) • Wide Reception Angle, 40° • Package Material and Color: Clear Epoxy • High Sensitivity • Peak Sensitivity l = 880 nm • Radiant Sensitive Area: 1.
245 mm x 1.
245 mm • This is a Pb−Free Device
ANODE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
TOPR TSTG TSOL−I
Operating Temperature
Storage Temperature
Soldering Temperature (Iron) (Note 2), (Note 3), (Note 4)
−40 to +100
°C
−40 to +100
°C
240 for 5 s
°C
TSOL−F Soldering Temperature (Flow) (Note 2), (Note 3)
260 for 10 s
°C
VBR Reverse Breakdown Voltage
50
V
PD
Power Dissipation (Note 1)
150
mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Derate power dissipation linearly 1.
33 mW/°C above 25°C.
2.
RMA flux is recommended.
3.
Methanol or Isopropyl alcohols are recommended as cleaning agents.
4.
Soldering iron tip 1/16” (1.
6 mm) minimum from housing.
T−1 3/4, 5MM PHOTODIODE CASE 100CF
ORDERING INFORMATION
Device
Package
Shipping
QSD2030
T−1 3/4, 5MM PHOTODIODE
(Pb−Free)
250 / Bulk Bag
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
λPS
Peak Sensitivity Wavelength
λSR
Wavelength Sensitivity Range
Θ
Reception Angle
−
880
−
nm
400
−
1100
nm
−
±20
−
°
VF
Forward Voltage
IF = 80 mA
−
1.
3
−
V
ID
Reverse Dark Current
VR = 10 V, Ee = 0
−
−
10
nA
IL
Reverse Light Current
Ee = 0.
5 mW/cm2, VR = 5 V, λ = 950 nm
15
25
−
mA
VO
Open Circuit Voltage
Ee = 0.
5 mW/cm2, λ = 880 nm
−
420
−
mV
TCV
Temperature Coefficient of VO
−
+0.
6
−
mV / K
ISC
Short Circuit Current
Ee = 0.
5 mW/cm2, λ = 880 nm
−
50
−
mA
TCI
Temperature Coefficient of ISC
−...
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