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STPS6045C

STMicroelectronics
Part Number STPS6045C
Manufacturer STMicroelectronics
Description Power Schottky Rectifier
Published Mar 7, 2023
Detailed Description $ . $ $ . $ 72 Features  Very small conduction losses  Negligible switching losses  Extreme fast switching  ...
Datasheet PDF File STPS6045C PDF File

STPS6045C
STPS6045C

Overview
$ .
$ $ .
$ 72 Features  Very small conduction losses  Negligible switching losses  Extreme fast switching  Low thermal resistance  Avalanche capability specified STPS6045C Power Schottky Rectifier Datasheet - production data Description Dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters.
Packaged in TO-247, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
Table 1.
Device summary Symbol Value IF(AV) VRRM Tj(max.
) VF(max.
) 2 x 30 A 45 V 175 °C 0.
63 V December 2015 This is information on a product in full production.
DocID4606 Rev 8 1/9 www.
st.
com Characteristics Characteristics STPS6045C Table 2.
Absolute ratings (limiting values, per diode) Symbol Parameter Value VRRM Repetitive peak reverse voltage 45 IF(RMS) RMS forward current 60 IF(AV) Average forward current δ = 0.
5 Tc = 150 °C per diode 30 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 400 IRRM Repetive peak reverse current tp = 2 µs square F = 1 kHz 1 IRSM Non repetitive peak reverse current tp = 100 µs square 3 PARM Tstg Tj dV/dt Repetitive peak avalanche tp = 1 µs power Tj = 25 °C Storage temperature range Maximum operating junction temperature(1) Critical rate of rise or reverse voltage 10600 - 65 to + 175 175 10000 1.
d----dP----T-t--o-j---t  R-----t--h-----1--j---–----a---- condition to avoid thermal runaway for a diode on its own heatsink Unit V A A A A A W °C °C V/µs Symbol Rth(j-c) Rth(c) Table 3.
thermal resistances Parameter Junction to case Per diode Total Coupling Value 0.
95 0.
55 0.
15 When the diodes 1 and 2 are simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) Unit °C/W 2/9 DocID4606 Rev 8 STPS6045C Characteristics Table 4.
Static electrical characteristics (per diode) Symbol Parameter Test conditions Min.
Typ.
Max.
Unit IR(1) ...


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