Power MOSFET - ON Semiconductor
Description
NTP75N03L09, NTB75N03L09
Power MOSFET 75 Amps, 30 Volts
N−Channel TO−220 and D2PAK
This Logic Level Vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package.
Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
• Ultra−Low RDS(on), Single Base, Advanced Technology • SPICE Parameters Available • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperatures • High Avalanche Energy Specified • ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0 • Pb−Free Packages are Available
Typical Applications
• Power Supplies • Inductive Loads • PWM Motor Controls • Replaces MTP75N03HDL and MTB75N03HDL in Many
Applications
© Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev.
7
http://onsemi.
com
75 AMPERES, 30 VOLTS RDS(on) = 8 mW
N−Channel D
G
S
MARKING DIAGRAMS & PIN ASSIGNMENTS
4 Drain 4
1 2 3
1 2 3
TO−220 CASE 221A
STYLE 5
75N 03L09G AYWW
1 Gate
3
Source 2
Drain
4 Drain
4 D2PAK
CASE 418AA STYLE 2
75N 03L09G AYWW
2
1 Drain 3
Gate
Source
75N03L09 A Y WW G
= Device Code = Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Publication Order Number: NTP75N03L09/D
NTP75N03L09, NTB75N03L09
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
VDSS VDGB
30
Vdc
30
Vdc
Gate−to−Source Voltage − Continuous
Non−repetitive (tp ≤ 10 ms)
Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp ≤ 10 ms)
VGS
±20
Vdc
VGS
±24
Vdc
ID
75
Adc
ID
59
IDM
225
Apk
Total Power Dissipation @ TC = 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
Single Puls...
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