Dual N-Channel MOSFET - ON Semiconductor
Description
MOSFET - Power for 1-Cell Lithium-ion Battery Protection
EFC2K103NUZ
12 V, 1.
8 mW, 40 A, Dual N-Channel
This power MOSFET features a low on−state resistance.
This device is suitable for applications such as power switches of portable machines.
Best suited for 1−cell lithium−ion battery applications.
Features
• 2.
5 V drive • Common−Drain type • ESD Diode−Protected Gate • Pb−Free, Halogen Free and RoHS Compliance
Typical Applications
• 1−Cell Lithium−ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Parameter
Symbol
Value
Unit
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse) PW ≤ 10 mS, Duty Cycle ≤ 1%
VSSS VGSS
IS ISP
12
V
±8
V
40
A
140
A
Total Dissipation (Note 1)
PT
3.
3
W
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Junction to Ambient (Note 1)
RqJA
37
1.
Surface mounted on ceramic substrate (5000 mm2 × 0.
8 mm)
Unit °C/W
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VSSS 12 V
RSS(ON) MAX 1.
8 mW @ 4.
5 V 1.
9 mW @ 3.
8 V 2.
6 mW @ 3.
1 V 4.
2 mW @ 2.
5 V
IS MAX 40 A
ELECTRICAL CONNECTION N−Channel
6, 7, 9, 10
Rg 8
Rg 3
1 : Source1 2 : Source1 3 : Gate1 4 : Source1 5 : Source1 6 : Source2 7 : Source2 8 : Gate2 9 : Source2 10 : Source2
Rg = 300 W
1, 2, 4, 5
PIN ASSIGNMENT
1
3
4
2
5
9
6
10
8
7
MARKING DIAGRAM
PB AYWZZ
WLCSP10 3.
54x1.
77x0.
140
CASE 567XB
PB = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Assembly Lot
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
September, 2019 − Rev.
1
Publicati...
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