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MTB29N15E

ON Semiconductor
Part Number MTB29N15E
Manufacturer ON Semiconductor
Description Power MOSFET
Published Nov 7, 2022
Detailed Description MTB29N15E Preferred Device Power MOSFET 29 Amps, 150 Volts N−Channel D2PAK This Power MOSFET is designed to withstand hi...
Datasheet PDF File MTB29N15E PDF File

MTB29N15E
MTB29N15E

Overview
MTB29N15E Preferred Device Power MOSFET 29 Amps, 150 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls.
These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.
) Operating and Storage Temperature Range VDSS VDGR VGS VGSM ID ID IDM PD 150 Vdc 150 Vdc ± 20 Vdc ± 40 Vpk 29 Adc 19 102 Apk 125 Watts 1.
0 W/°C 2.
5 Watts TJ, Tstg − 55 to °C 150 Single Pulse Drain−to−Source Avalanche EAS Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 29 Apk, L = 1.
0 mH, RG = 25 Ω) mJ 421 Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient (Note 1.
) RθJC RθJA RθJA °C/W 1.
0 62.
5 50 Maximum Lead Temperature for Soldering TL Purposes, 1/8″ from case for 10 seconds 260 °C 1.
When surface mounted to an FR4 board using the minimum recommended pad size.
http://onsemi.
com 29 AMPERES 150 VOLTS RDS(on) = 70 mΩ N−Channel D G S 12 3 4 D2PAK CASE 418B STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain ...


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