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FDS6898A

ON Semiconductor
Part Number FDS6898A
Manufacturer ON Semiconductor
Description Dual N-Channel MOSFET
Published Nov 7, 2022
Detailed Description FDS6898A FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description Features These N...
Datasheet PDF File FDS6898A PDF File

FDS6898A
FDS6898A

Overview
FDS6898A FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• 9.
4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.
5 V RDS(ON) = 18 mΩ @ VGS = 2.
5 V • Low gate charge (16 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD1 DD1 DD2 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 5 4 6 Q1 3 7 2 Q2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Dual Operation Power Di...


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