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ESDM1131

ON Semiconductor
Part Number ESDM1131
Manufacturer ON Semiconductor
Description 3.3V ESD Protection Diodes
Published Oct 9, 2022
Detailed Description ESDM1131 3.3 V ESD Protection Diodes Micro−packaged Diodes for ESD Protection The ESD1131 is designed to protect voltag...
Datasheet PDF File ESDM1131 PDF File

ESDM1131
ESDM1131

Overview
ESDM1131 3.
3 V ESD Protection Diodes Micro−packaged Diodes for ESD Protection The ESD1131 is designed to protect voltage sensitive components from ESD.
Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD.
Because of its small size, it is suited for use in smartphone, smart-watch, or many other portable / wearable applications where board space comes at a premium.
Features • Low Capacitance (4 pF, I/O to GND) • Small Body Outline Dimensions ♦ 01005 Size: 0.
445 x 0.
240 mm • Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) • Low ESD Clamping Voltage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Operating Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Seconds) TL 260 °C IEC 61000−4−2 Contact (ESD) IEC 61000−4−2 Air (ESD) ESD ESD ±16 kV ±16 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of survivability specs.
www.
onsemi.
com MARKING DIAGRAM X4DFN2 A CASE 718AA A = Specific Device Code PIN CONFIGURATION AND SCHEMATIC 1 2 = ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2017 1 March, 2018 − Rev.
1 Publication Order Number: ESDM1131/D ESDM1131 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM I/O Pin to GND 3.
3 V Breakdown Voltage VBR IT = 1 mA, I/O Pin to GND 4.
0 5.
0 6.
0 V Reverse Leakage Current IR VRWM = 3.
3 V, I/O Pin to GND...


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