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ESDM1053

ON Semiconductor
Part Number ESDM1053
Manufacturer ON Semiconductor
Description ESD Protection Diodes
Published Oct 9, 2022
Detailed Description ESD Protection Diodes Micro−packaged Diodes for ESD Protection ESDM1053 The ESDM1053 is designed to protect voltage sens...
Datasheet PDF File ESDM1053 PDF File

ESDM1053
ESDM1053

Overview
ESD Protection Diodes Micro−packaged Diodes for ESD Protection ESDM1053 The ESDM1053 is designed to protect voltage sensitive components from ESD.
Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD.
Because of its small size, it is suited for use in smartphone, smart−watch, or many other portable / wearable applications where board space comes at a premium.
Features • Low Capacitance (5.
5 pF Typ, I/O to GND) • Small Body Outline Dimensions: − 01005 Size: 0.
435 x 0.
230 mm • Protection for the Following IEC Standards: IEC 61000−4−2 (Level 4) • Low ESD Clamping Voltage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Operating Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Seconds) TL 260 °C ESDM1053: IEC 61000−4−2 Contact IEC 61000−4−2 Air ESD ±18 kV ±18 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of survivability specs.
DATA SHEET www.
onsemi.
com DSN2 CASE 152BB MARKING DIAGRAM D D = Specific Device Code PIN CONFIGURATION AND SCHEMATIC 1 2 = ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2021 1 March, 2022 − Rev.
0 Publication Order Number: ESDM1053/D ESDM1053 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM I/O Pin to GND 5.
5 V Breakdown Voltage Reverse Leakage Current Clamping Voltage TLP (Note 1) VBR IT = 1 mA, I/O Pin to GND IR VRWM = 5.
5 V, I/O ...


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